 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A IC ................................................................... 100A VCES ......................................................... 1700V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-6.5 MOUNTING HOLES 12 800.25 12 4 3-M5 NUTS 12.5 (SCREWING DEPTH) 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 C2E1 E2 C1 29 +1 -0.5 LABEL CIRCUIT DIAGRAM G1 E1 21.2 E2 G2 Feb. 2009 1 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 108C*1 Pulse Operation Pulse TC = 25C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 1700 20 100 200 100 200 960 -40 ~ +150 -40 ~ +125 3500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W C C Vrms N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 100A, VGE = 15V VCC = 1000V, IC = 100A VGE = 15V RG = 4.8, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Tj = 25C Tj = 125C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. -- 5.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.8 Limits Typ. -- 7.0 -- 2.2 2.45 -- -- -- 670 -- -- -- -- -- 10 -- -- -- 0.022 -- Max. 1 8.5 2.0 2.8 -- 24.7 2.8 0.53 -- 200 150 550 350 300 -- 3.0 0.13 0.21 -- 48 Unit mA V A V nF nC ns C V K/W *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj = 25C 200 VGE = 20V TRANSFER CHARACTERISTICS (TYPICAL) 12 VCE = 10V COLLECTOR CURRENT IC (A) 160 COLLECTOR CURRENT IC (A) 15 13 160 120 11 120 80 10 40 8 0 0 2 4 6 8 9 10 80 40 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 VGE = 15V 10 Tj = 25C 4 8 3 6 IC = 200A IC = 100A 2 4 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 2 IC = 40A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 EMITTER CURRENT IE (A) 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25C Tj = 125C 7 5 3 2 Cies 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes 101 0.5 1 1.5 2 2.5 3 3.5 4 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) 7 5 3 2 tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 1000V VGE = 15V RG = 4.7 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V 3 VGE = 15V 2 IC = 100A 102 Tj = 125C 7 Inductive load 5 tf td(off) 3 2 101 7 5 3 2 101 7 5 3 2 td(on) tr 100 1 10 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 103 7 5 3 2 SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 1000V VGE = 15V RG = 4.7 102 Tj = 125C 7 Inductive load 5 3 2 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 Conditions: VCC = 1000V VGE = 15V 3 IC = 100A Tj = 125C 2 Inductive load 7 5 Err Eoff Eon 102 7 5 3 2 Eon 101 7 5 3 2 Eoff Err 2 3 5 7 101 2 3 5 7 102 100 1 10 2 3 5 7 102 2 3 5 7 103 101 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = 15V RG = 4.7 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 Single Pulse Tc= 25C Tc measured point is just under the chips 10-2 7 5 IGBT part: 3 Per unit base = Rth(j-c) = 0.13K/W 2 FWDi part: 101 1 10 Per unit base = Rth(j-c) = 0.21K/ W 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 5 |
Price & Availability of CM100DY-34A09
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |